Perfectly selective Si epitaxial growth due to synchrotron radiation irradiation during disilane molecular beam epitaxy

Abstract

Perfect selectivity in Si epitaxial growth has been achieved by irradiating SR during molecular beam epitaxy (MBE) using disilane. No Si nucleation occurs on SiO2 irrespective of growth time, in contrast to conventional selective growth by MBE using disilane. At a given disilane pressure, higher temperatures are preferable for SR-induced selective growth, whereas lower temperatures are preferable for conventional selective growth. It is proposed that perfect selectivity results from SR-stimulated SiO2 evaporation which expels Si atoms with dangling bonds, i.e., Si nucleation sites, from the SiO2 surface.