Abstract
Perfect selectivity in Si epitaxial growth on a Si/SiO2 substrate has been achieved by SR irradiation during disilane molecular-beam epitaxy (MBE). This differs from conventional selective growth by gas-source MBE using disilane in that no polycrystalline Si is deposited on the SiO2 irrespective of growth time. A temperature of over 700 °C is necessary for perfect selective growth. The effects of SR irradiation on the initial stage of polycrystalline Si film formation on SiO2 are also investigated as they are closely related to the appearance of perfect selectivity. It is demonstrated that a photoenhanced reduction completely removes Si from SiO2 and that this process brings about perfect selectivity.
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