Pentacene organic thin‐film transistor with HfYO gate dielectric made on adhesive vacuum tape

Abstract

Pentacene organic thin-film transistor (OTFT) with HfYO as gate dielectric has been fabricated at room temperature on adhesive flexible vacuum tape and shows high performance. The threshold voltage is as low as −1.77 V due to the high-κ gate dielectric employed. A small sub-threshold swing (SS) of 0.145 V/dec indicates good interface between the gate dielectric and pentacene film. Atomic force microscopy (AFM) reveals that large pentacene gains form on the HfYO gate dielectric, leading to a high carrier mobility of 0.236 cm2V−1s−1. These good results suggest that the adhesive vacuum tape can be used as the substrate for adhesive flexible OTFT, and HfYO is a promising gate dielectric for high-performance pentacene OTFT.