Abstract
High-quality infrared detectors have been made by rf oxygen reactive sputtering of PbTe films. At an operating temperature of 90 °K, these devices are close to the 300 °K background-noise-limited photoconductive detection. Peak responsivities higher than 106 V/W and peak detectivities Dλ* of 8.5 × 1010 cm Hz1/2/W have been obtained with a field of view of 2π steradians.
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