Abstract
The effect of annealing on EPMA spectra, infrared absorption spectra, optical gap (E o) and photoconductivity (Δσp) has been studied for a-Si:H films prepared both by ArSiH 4 glow discharge decomposition (GD) and ArH 2 reactive sputtering (SP) under various deposition conditions. SP films and GD-cathode films involve Ar atoms more than 5 at.% while GD-anode films less than 1 at.%, and Ar atoms are never evolved at least up to 400°C. It has been indicated that Ar atoms play the role of steric hindrance against not only H 2 effusion but also thermal rearrangement of H local environments, which is strongly correlated with differences in E o and Δσp between GP and SP films
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
