Abstract
SUNY Poly SEMATECH has established an infrastructure development program to ensure that needed beam based metrology tools and techniques are available for leading edge semiconductor processes and devices. The design, development, and fabrication of high quality dense array samples with ≤16 nm defects at known locations is a key requirement to assessing new inspection technologies. Due to the technical difficulties of creating high quality programmed defect samples at the required sizes, the authors have undertaken multiple paths of electron beam lithographic development, supporting organizations and processing techniques to optimize and deliver the needed samples. In doing so, this program has created a snapshot of electron beam lithographic capability. This paper discusses our experience with electron beam lithography used to create the arrays samples.
Published Version
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