Abstract
The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional crystalline semiconductors as building blocks in next-generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate an approach for the formation of lithographically patterned arrays of lateral semiconducting heterojunctions within a single two-dimensional crystal. Electron beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser vaporization of sulfur to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are studied by Raman and photoluminescence spectroscopy, atomically resolved scanning transmission electron microscopy and device characterization. This demonstration of lateral heterojunction arrays within a monolayer crystal is an essential step for the integration of two-dimensional semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin devices.
Highlights
The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics
Lithographic patterning and compatible synthesis approaches are required for high-density integration of semiconductor heterojunctions, as was recently demonstrated for lateral graphene interconnects embedded within an insulating monolayer of boron nitride by etching and regrowth processes[17]
This controllable and versatile formation of lithographically patterned lateral heterojunction arrays offers the potential for their integration as 2D layer ‘building blocks’, along with metal/insulator domains, for next-generation electronics
Summary
The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics. The junctions and conversion process are studied by Raman and photoluminescence spectroscopy, atomically resolved scanning transmission electron microscopy and device characterization This demonstration of lateral heterojunction arrays within a monolayer crystal is an essential step for the integration of two-dimensional semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin devices. Using well-developed and scalable photolithography and electron beam lithography processes, a variety of patterns exposed on monolayer MoSe2 crystals are selectively converted to MoS2 by pulsed laser vaporization of sulfur, producing predefined arrays of lateral MoSe2/MoS2 heterojunctions within a single monolayer. High-angle annular dark-field atomic resolution scanning transmission electron microscopy (STEM) reveals that the MoS2 is comparable in quality to pristine material, with sharp (B5 nm) heterojunction boundaries This controllable and versatile formation of lithographically patterned lateral heterojunction arrays offers the potential for their integration as 2D layer ‘building blocks’, along with metal/insulator domains, for next-generation electronics
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