Abstract
In this work the characterization of ZnS/ZnSe MQW structures with different well widths is reported. The MQW were grown in an atmospheric pressure MOVPE reactor with rotating susceptor on (100) GaAs substrates. The structural characterization was performed with high resolution and conventional scanning transmission electron microscopy (STEM) of cross-sectional specimen in high angle annular dark field (ADF) and bright field (BF) mode. Photoluminescence (PL) at 12 K and cathodoluminescence (CL) were used to judge the optical properties. At the GaAs/ZnSe interface indications for compound formation were observed. The deterioration of the luminescence properties with increasing well width which is seen in photoluminescence and low voltage cathodoluminescence measurements, is correlated with the deterioration of the structural quality of the ZnSe wells. The observation of relaxation effects is supported by comparison of theoretical and experimental luminescence peak positions.
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