Abstract
Heterojunction solar cells (a-Si:H/c-Si) are interface dominated devices and hence suppression of charge carrier recombination at the a-Si:H/c-Si interface is a very important aspect. Till now, all efforts and results have been obtained on mono-crystalline silicon. It would be very important from the technological point of view if similar high efficiency devices are realized on cheaper mc-Si wafers. The aim of this work is to study the passivation effect on mc-Si wafer by i-a-Si:H thin layer. The i-a-Si:H thin passivation layer is deposited on mc-Si wafer by Hot-Wire CVD at various filament temperature and silane flow rates. The passivation effect has been studied by effective carrier lifetime measurement and implied open circuit voltage.
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