Abstract
Capacitance–voltage measurements have been performed on deuterated boron-doped synthetic-type IIb diamond. They demonstrate the electrical passivation of the boron acceptors, which was manifested by a persistent decrease in capacitance after deuteration. The capacitance–voltage dependence is explained by means of a two-layer depletion width model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have