Capacitance–voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes

Abstract

Abstract Capacitance–voltage measurements have been performed on deuterated boron-doped natural type IIb diamond. They demonstrate the electrical passivation of the boron acceptors, which was manifested by a persistent decrease in capacitance after deuteration. Bias annealing experiments have been carried out to determine the charge state of the diffusing deuterium. The differences between annealing with or without bias lead to the conclusion that boron–deuterium complexes dissociate at about 750 K and that the released deuterium is positively charged.