Abstract
This paper reports on the efficient passivation of Mg-doped GaAs. The extent of the passivation was demonstrated to be highly temperature dependent, with the passivation being even more efficient than that of Zn-doped GaAs at temperatures below $140\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}.$ By performing reverse bias annealing measurements between 60 and $130\ifmmode^\circ\else\textdegree\fi{}\mathrm{C},$ we observed the reactivation of the Mg acceptors within the high-field region of the Schottky diode. This reactivation was found to obey first-order kinetics, with a dissociation energy ${E}_{\mathrm{MgH}}=(0.90\ifmmode\pm\else\textpm\fi{}0.03) \mathrm{eV}$ and an attempt frequency ${\ensuremath{\nu}}_{0}{=(3}_{\ensuremath{-}2}^{+5})\ifmmode\times\else\texttimes\fi{}{10}^{8} {\mathrm{s}}^{\ensuremath{-}1}.$ These results suggest that the Mg-H configuration is not bond centered, as also suggested by previous infrared absorption studies.
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