Reactivation kinetics of the Cu and Fe hole traps in hydrogenated p-type GaAs

Abstract

Deep level transient spectroscopy has been used to investigate hydrogen passivated p-type GaAs. Annealing studies have shown reactivation of the passivated CuB and Fe2+/3+ defects under differing bias conditions. The dissociation energies and dissociation attempt frequencies of these defects have been determined. It has been found that Fe–H has dissociation energies of 1.37 eV under zero bias annealing and 0.83 eV under reverse bias annealing. The CuB–H defect only displays measurable reactivation under reverse bias conditions, and has a dissociation energy of 1.57 eV. The passivated CuA defect does not show reactivation, even after extended periods of annealing at high temperatures.