DLTS Studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions

Abstract

The characteristic degradation in silicon NPN bipolar junction transistors (BJTs) of 3DG130 type is examined under the irradiation with 35MeV silicon (Si) ions under forward, grounded and reverse bias conditions, respectively. Different electrical parameters were in-situ measured during the exposure under each bias condition. Using deep level transient spectroscopy (DLTS), deep level defects in the base-collector junction of 3DG130 transistors under various bias conditions are measured after irradiation. The activation energy, capture cross section and concentration of observed deep level defects are measured using DLTS technique. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions could affect the concentration of deep level defects, and the displacement damage induced by heavy ions.