Abstract
The formation of interstitial atoms and vacancies, as well as their clusters in the form of dislocation loops and voids in CdTe is simulated. The sizes and features of the growth of dislocation loops and voids were determined depending on the irradiation time, taking into account the decrease in the number of nodes of the semiconductor crystal lattice with the irradiation time, since in experiments we studied a thin CdTe foil in a transmission electron microscope (TEM). The calculated and experimental data are compared.
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