Partial oxygen effect on the optical behaviour of AlCu2O thin films using the reactive sputtered method

Abstract

DC reactive method was used to prepare the aluminium doped Cu2O thin films with a partial variation of O2 pressure. The prepared films, Al-Cu2O were characterised using XRD, FTIR and optical studies. The XRD revealed that the film was p-type semiconductor and polycrystalline one. The presence of Cu2O and un-oxide copper layer structure were detected at 2θ = 36.8° and 42.4° in the (1 1 1) plane. The variation of crystal size was traced between 26.48 and 7.642 nm with the help of FWHM by the variation of partial pressure of O2. The FTIR gives that the peaks corresponding to characteristics stretching modes of vibrations. The optical studies revealed the percent of transmission and Eg of Al doped Cu2O films at different O2 partial pressure. The present study mainly focused on the microstructural behaviour of as deposited films to impose in the photovoltaic devices and their applications.