Abstract
Various LDMOS device design parameters to mitigate quasi-saturation (QS) have been identified. Based on this, a set of independent and mixed device designs to mitigate QS, while maximizing the device performance, are presented. The impact of QS on the analog/RF/switching performance of these independent and mixed designs is investigated thoroughly, while analogizing performance with QS for the first time. Furthermore, hot carrier induced (HCI) degradation in various independent and mixed LDMOS designs is studied using spherical harmonic expansion of Boltzmann transport equation. In addition to this self-heating behavior, safe operating area (SOA) boundaries and electrostatic discharge (ESD) behavior of independent and mixed LDMOS designs with and without QS are studied. For the first time, HCI degradation, self-heating behavior, SOA boundary, and ESD failure in LDMOS devices are correlated with the extent of QS in LDMOS devices, based on which device design guidelines to tackle all performance versus reliability challenges are derived.
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