Abstract
Parasitic parameter analysis is the focus of intelligent power module switch performance research. This paper will utilize the model of 600V/30A intelligent power module and extract the part of circuit layout bonding wires parasitic parameter by Ansys Q3D Extractor, expedition the relationship between physical bonding parameter and parasitic parameter in the intelligent power module circuit. An exact three-phase circuit module of high voltage intelligent power module and bonding wires package module is established. Through Ansys Q3D Extractor, test a series of bonding parameters from the three-phase circuit layout module and extract the parasitic parameters of the bonding wires. The experimental results of the parasitic parameters are analysed and compared, and the influence degree of the bonding parameters on the parasitic parameters is discussed. An improved solution is proposed for the bonding wires of the intelligent power module to reduce the voltage spike that the MOSFET chip during the turn-off process.
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