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Abstract
In this paper, we describe the parasitic bipolar effect of the fabricated thin-film silicon-on-insulator (SOI) power metal–oxide–semiconductor field-effect transistor (MOSFET) at high temperatures. This effect in the on-state was suppressed as temperature increased. This effect in the off-state was promoted as temperature and body contact pitch increased. The parasitic bipolar effect caused by the thermally generated current is enhanced by increasing temperature and decreasing channel length. This reduced breakdown voltage.
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