Abstract
The article deals with experimental studies that have been carried out in order to examine the radiation characteristics of commercially available semiconductor laser diodes and to analyze the reasons that cause changes in the characteristics of laser radiation. The need for such studies is connected with the search for expanding the possibilities of using semiconductor lasers in various appliances and devices operating in different conditions. The article presents experimental study results of the features of laser diodes emission spectra made on the basis of AlGaInP solid quadruple solution in the temperature range (50-300) K. The influence of temperature on the characteristics of the radiation spectrum was studied. The temperature was stabilized in a Cryomech ST15 closed-cycle vacuum helium cryostat. The radiation spectrum was investigated using a MDR-23 monochromator with a CCD detector installed. It is shown that the spectral characteristics of the emission spectrum (the predominance of stimulated or induced radiation, the wavelength of the radiation) depend on the operating temperature of the laser diode. Information is obtained that in the temperature range (50-300) K certain processes take place in the semiconductor laser diode material that lead to a change in the width of the forbidden band by approximately (4.2-4.5) % of the value corresponding to a temperature of 50 K. Data is given that the the temperature coefficient value of the change in the forbidden band width varies in absolute magnitude in 2-3 times within the investigated temperature interval. The authors propose an experimental method for determining the ionization energies of exciton levels localized in the region of the p-n junction of a laser diode. This method can find practical application for quality control of material in the manufacture of semiconductor lasers. The advantage of the proposed method is that it provides information on the exciton spectrum of a laser diode material in the narrow zone of the p-n junction in which laser radiation is formed.
Highlights
Semiconductor lasers based on heterostructures are used in various fields of science, engineering, and medicine
Commercially available semiconductor laser diodes of two brands with similar performance characteristics were investigated: low output power; wavelength of about 635 nm; working voltage not exceeding 2.3 V for laser diode 1 (L1) and 2.8 V for laser diode 2 (L2); operating current was less than 23 mA and less than 35 mA
The laser radiation wavelength at a specific temperature will be considered as the wavelength corresponding to the maximum value of the laser radiation intensity in the spectrum measured at this temperature
Summary
Semiconductor lasers based on heterostructures are used in various fields of science, engineering, and medicine. In the operation process of mass production semiconductor lasers, features of their operational characteristics are manifested, which are not reflected in the passport data [1, 2]. These features can manifest themselves in the practical use of semiconductor lasers. There is further search for expanding the possibilities of using semiconductor lasers in various devices and devices operating in a wide temperature range. The work is devoted to the study of the radiation characteristics of commercially available semiconductor laser diodes in a wide range of temperatures, from 50 K to 300 K, and to the analysis of the causes of change in laser radiation characteristics
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