Parameterized Comparison of Carbon Nanotube and Graphene Nanoribbon Field Effective Transistor

Abstract

In this paper, performance analysis of carbon nanotube field-effect transistors (CNTFET) and graphene nano-ribbon field-effect transistors (GNRFET) is done based on transfer characteristics, cut-off frequency, total charge, intrinsic delay, and transconductance by varying parameters such as temperature, oxide thickness, and channel length. After thorough investigation, it was inferred that gate-all- around CNTFET (GAA-CNTFET) and double-gate GNRFET (DG-GNRFET) had a better performance compared to back-gate CNTFET (BG-CNTFET) and back-gate GNRFET (BG-GNRFET). It’s observed that for higher values of voltages, GAA-CNTFET has almost 16.67% higher drain current than DG-GNRFET. The transconductance of GAA-CNTFET also outperforms DG-GNRFET for higher values of voltages. DG- GNRFETs have performed better compared to GAA- CNTFETs when it comes to cut-off frequency. At voltage around 1 V, when the temperature is kept constant, GAA-CNTFET shows 19.36 times more cut-off frequency than DG-GNRFET. Time delay of GAA- CNTFET is 33% more than DG-GNRFET when oxide thickness is 2nm.