Comparative analysis of the impacts of CNTFET and GNRFET drivers on the crosstalk effects in MLGNR interconnects at 7nm technology node

Abstract

This paper presents a comparative evaluation of the performance of the multilayer graphene nanoribbon (MLGNR) lines with carbon-based drivers and receivers at 7nm technology node in presence of the crosstalk effects. Graphene nanoribbon field-effect transistors (GNRFET) and Carbon nanotube field-effect transistors (CNTFET) are used as driver and receiver inverters at the input and output of the MLGNR interconnects. For a more accurate assessment, the five-line transmission lines including two pairs of aggressor lines is considered. The results show that for the same I off and the same channel dimensions, CNTFET drivers show significant improvement regarding the crosstalk-induced effects over GNRFET. According to the results, using CNTFET drivers leads to 67%, 64%, and 34% lower crosstalk delay than the GNRFET-based for 100μm, 200μm and 500μm MLGNR interconnect length, respectively. Moreover, the CNTFET- based lines have 36%, 27%, and 16% smaller crosstalk noise area than their GNRFET counterparts for different lengths of MLGNR interconnects.