Abstract

A high-performance numerical scheme is proposed for fully coupled electrothermal simulation of electrothermal effects in resistive switching random access memory (RRAM) arrays. To enhance its capability for fast solving large scale problem, a J parallel adaptive unstructured mesh infrastructure and domain decomposition method (DDM) based double-level parallel scheme is employed to implement a parallel simulator. The performance of the developed simulator is validated by comparing with that of COMSOL Multiphysics. Further, the influence of conductive filament (CF) shape in the RRAM arrays on their electrothermal characteristics are investigated and analyzed.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.