Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Hao Xie,Xingxing Xu,Jixin Chen,Wen-Yan Yin,Guodong Zhu,Yazhou Chen,Wenchao Chen,Shuo Zhang

doi:10.1109/emccompo.2019.8919912

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Hao Xie, Xingxing Xu + Show 6 more

https://doi.org/10.1109/emccompo.2019.8919912

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Publication Date: Oct 1, 2019

Citations: 13

Affiliation: Zhejiang University, National Engineering Research Center of Electromagnetic Radiation Control Materials, Zhejiang University-University of Edinburgh Institute

#Resistive Random Access Memory Array #Resistive Random Access Memory + Show 8 more

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Abstract

A finite element method (FEM)-based simulator with capability of parallel computing is developed for Multiphysics modeling and simulation of resistive random access memory (RRAM) array. The thermal crosstalk effects of a high density vertically integrated RRAM array are investigated. Simulation results show that severe reliability problem may occur during the reset process for RRAM cells even without applied voltage which can be transferred from low resistance state to high resistance state by mistake and hence lose their stored information.

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