Abstract
AbstractWe fabricated bottom gate nanocrystalline silicon (nc‐Si) thin film transistor (TFT). We report the instability phenomena of the nc‐Si TFT under light illumination under gate bias stress for the first time. The comparison with hydrogenated amorphous silicon (a‐Si:H) TFT was carried out. Under only light illumination was induced, the transfer characteristic of nc‐Si TFT was almost unchanged. Also, positive gate bias stress hardly changed the VTH of nc‐Si TFT, while that of a‐Si:H TFT was shifted considerably. However, under negative bias stress, a‐Si:H TFT showed rather high stability. Instability mechanism under light illumination under gate bias stress was different in nc‐Si TFT and a‐Si:H TFT. The VTH shift of both TFT was opposite direction.
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