P‐1.14: The Influence of Bottom gate Dielectric Roughness on the Performance of Double‐Gate a‐IGZO Thin Film Transistors

Abstract

In this paper,double gate amorphous indium gallium zinc oxide thin film transistors (a‐IGZO TFTs)are investigated in which we use SiO2 deposited by plasma enhanced chemical vapor deposition(PECVD) as bottom‐gate dielectric with different roughness measured by AFM. Our results show that the devices with smaller roughness of bottom‐gate dielectric, which is able to decrease the interface scattering between a‐IGZO surface conducting channel and gate dielectric, can get much larger on state currents and bigger field effect mobilities.Besides,the devices still have good interface properties according to hysteresis curves.