Abstract
We have shown that the method of analyzing the fundamental barrier height (flat-band barrier height at zero field) for n-type platinum-silicide Schottky barrier diodes can be extended to p-type Schottky barrier diodes. A mean flat-band barrier height of 0.272 ± 0.005 eV is obtained for p-type Schottky barrier diodes by relating the measured barrier heights and their corresponding ideality factors from I- V measurements. Nine different combinations of processing conditions were used in the fabrication of these devices so that the effects of different processes on the device characteristics could be evaluated.
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