Abstract
The nature of the electrical behavior of Schottky contact is still not understood satisfactorily. The Schottky contacts often exhibit anomalous current –voltage characteristics at low temperature with temperature dependent ideality factors and zero bias barrier height evaluated for the thermionic emission. Our analysis of the In‐pSi Schottky contact is based on the measurement of the I‐V characteristics of Schottky diodes in a wide temperature range. The deviation from the thermionic–emission current caused by generation‐recombination, tunneling or leakage can significantly affect the derived parameters of the Schottky contacts. Therefore, determination of the Flat band barrier height is supposed to be more realistic. Here we discuss the determination of flat band barrier height for fabricated In‐pSi Schottky contact by analyzing the trend of the variation of zero bias barrier height and ideality factor for such contacts.
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