P-type doping of II–VI heterostructures from surface states: Application to ferromagnetic Cd1−xMnxTe quantum wells

Abstract

We present a study of p-type doping of CdTe and Cd1−xMnxTe quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding 2×1011 cm−2. Surface doping was applied to obtain samples with Cd1−xMnxTe quantum well with up to x=9.3% containing hole gas. We could also increase the growth temperature up to 280 °C, which results in sharper photoluminescence lines, when compared to the similar nitrogen doped samples. Carrier-induced ferromagnetism was observed in surface doped samples.