Relaxation processes and in-plane electron mobility limited by interface defects in CdTeCd 1- xMn xTe quantum wells

Abstract

The relaxation processes due to the interface roughness, alloys disorder and spin-spin exchange interactions arising from the interfaces between the layers in the CdTe-(Cd, Mn)Te quantum well systems are considered theoretically. Interface roughness is found to be the dominant scattering mechanism but the mobility limited by interface roughness does not follow a L 6 law, where L is the quantum well thickness.