Abstract
p–i–n diodes for millimetre wave applications were studied. The diodes were integrated into a BiCMOS technology, permitting monolithic millimetre wave circuits. The impact of process and layout variations on the insertion loss and isolation performance metrics was studied. Devices with an insertion loss of 1 dB and isolation of 17 dB at 60 GHz were obtained.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
