Abstract
In this paper, the impact of process variation on the performance parameters of junctionless silicon nanotube field effect transistor (JLSiNT-FET) is studied using 3D numerical simulations. The performance metrics, ON current, OFF current, and unity gain frequency are taken for different physical factors. Sensitivity of the physical factors is computed over a range at various points. The ranking of the structural parameters for various performance metrics is done using a two level full factorial design of experiment method. Overall ranking proposes that the outer diameter of the silicon tube is the most sensitive parameter and inner diameter of the silicon tube is the least sensitive parameter.
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