P‐88: All‐Inorganic Quantum‐Dot Light‐Emitting Devices Prepared by Solution‐Process Route

Abstract

AbstractWe have fabricated all‐inorganic quantum‐dot light‐emitting devices(QDLED) with NiO as a hole transporting layer and TiO2 as a inorganic electron transporting layer. P‐type NiO and n‐type TiO2 charge‐transport layers were synthesized by sol‐gel method using spin‐coating technique. The thickness of TiO2 layer was optimized with different spin‐coating speed, and studied the luminescence characteristics of devices. Results indicated devices with 4000 rpm TiO2 layer has lower turn voltage 4.2V and higher EL intensity.