Abstract
Quantum dot light emitting diodes (QLEDs) have attracted much attention recently due to their advantages of high color saturation, tunable color emission and inherently high stability. Such attractive properties make QLEDs a promising candidate for the next generation display. Here we report the fabrication of QLED with a 6x6 mm2 light emitting area. The anode of QLED is an ITO glass. The hole injection layer (HIL), the hole transport layer (HTL), and the electron injection layer (EIL) are made of poly-ethylene-dioxythiophene:polystyrene sulphonate (PEDOT:PSS), poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (Poly-TPD), and ZnO nanoparticels, respectively. The QLED exhibits a low turn-on voltage and luminance at 3060 cd/m2. The unique QLED structure and fabrication processes make it suitable for printing.
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