Abstract
AbstractWe have fabricated flexible resistive switching memory (RRAM) using Al‐doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co‐operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have