Metal-Organic Framework-Based Flexible Resistive Switching Memory Devices

Abstract

Metal-organic framework (MOF) which consists of metal ionic nodes and organic linkers has wide applications such as hydrogen storage, catalysts, and gas sensors due to its structural and chemical versatilities. On demand for currently increasing interests for flexible and wearable electronic devices, it is suggested that some MOF materials have electrical hysteresis phenomena which can be further utilized as data storage device. The hysteresis arises from redox-active behavior of organic molecules. By selecting proper substances, realizing MOF-based resistive switching memory device could be possible. In this work, we applied zeolitic-imidazolate framework (ZIF-8), one of MOF materials, which is composed of zinc ions and imidazole molecules, as the resistive switching layer on the plastic substrate. The ZIF-8 layer on the gold-coated polyethylene terephthalate substrate is deposited by simple solution processes. Flexible ZIF-8-based resistive switching memory possesses set/reset behavior consistent over several cycles with good mechanical flexibility. The resistive switching behavior of ZIF-8-based device is thought to be due to the changes of charge conduction mechanisms from electron hopping to transporting through conjugated organic molecules. Flexible resistive switching memory device with solution-processed ZIF-8 thin film could be a promising candidate for flexible and wearable memory devices.