Abstract
AbstractReplacing the current non‐alkali glass with soda lime glass can significantly reduce the cost of the current TFT‐LCD module. One key step in manufacturing is to make TFT backplane on soda lime glass substrate. In this work, we demonstrate low temperature a‐ Si thin film transistor (TFT) at 200°C on soda lime glass. with the use of SiNx barrier to prevent sodium contamination, we show the TFT properties can be improved significantly and achieve TFT of saturation mobility 0.47cm2/Vs, threshold voltage 0V, off current 77×10−11 A, sub‐threshold swing 1.0 V/dec. We also show that our TFT device has comparable or better threshold voltage stability as compared to those made in non‐alkali glass. Finally, we show the robustness of SiNx barrier against long term sodium migration.
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