Abstract
This work presents a universal and comprehensive compact model for three‐ and four‐terminal thin‐film transistors (TFTs). The DC and AC behaviors of TFTs with independent bottom gate or light shield layer are modeled. A threshold‐voltage‐based capacitance model is built to meet the requirements of charge conservation and Gummel capacitance symmetry in order to illuminate spurious voltage shift and current discontinuity that are found in conventional TFT models such as RPI. Stress models are implemented in a stretched‐exponential form. In addition, a compact model for OLED is included in the build.
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