Abstract
Novel materials such as ZnO, InGaZnO, AMO-CNT, and organic materials and improved fabrication processes dramatically enhanced the achieved and projected thin film transistor (TFT) performance. The effective field-effect mobility of metal oxide TFT materials has reached values comparable to those for short-channel Si CMOS. We report on an improved compact model based on the RPI TFT model, the unified charge control model (UCCM), and the multi-segment TFT compact model. This improved model accounts for a non-exponential slope in the subthreshold regime by introducing a varying subthreshold slope and accounts for non-trivial capacitance dependence on the gate bias. The application of this new TFT model to the analysis of the TFT response showed that a TFT complementary inverter using the phase-matched THz signal feeding should yield a very sensitive detection of THz radiation impinging on a short channel TFT.
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