Abstract
Processes of a new transparent amorphous oxide semiconductor (TAOS) as ETL and EIL were developed. Conventional processes can be applied for the deposition and structuring of the new TAOS, which enables to fabricate inverted OLEDs. The new TAOS materials make it possible to realize thicker ETL, potentially giving impacts not only on yield, but also on higher aperture ratio and cost reduction by omitting resin banks.
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