Abstract

It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (μ) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In−Zn−O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was estimated to have poor κ and high electrical conductivity compared to crystalline In2O3:Sn (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in transparent display devices.

Highlights

  • Approximately 30% of fossil fuel energy is used; it is desirable to utilize the huge amounts of waste energy

  • We demonstrate that the transparent amorphous oxide semiconductors (TAOS)

  • It has been demonstrated through first-principles calculations and various experimental measurements that the transparent amorphous oxide semiconductor (TAOS) can function as an excellent thermoelectric material

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Summary

Introduction

Approximately 30% of fossil fuel energy is used; it is desirable to utilize the huge amounts of waste energy. Previous studies about materials transparent conductive oxides were focused correlation between figure of merit (ZT) (ZT). Thermoelectric figure merit oxide thin films a function conductivity. Since amorphous materials have randomly displaced atomic structures, the thermal conductivity (κ) in amorphous oxide semiconductors is expected to be lower compared to that in the conductivity (κ) in amorphous oxide semiconductors is expected to be lower compared to that in the crystalline state, while it maintains low resistivity values. We suggest that an a-IZO thin film could be a good amorphous material can have high μ and low κ. We suggest that an a‐IZO thin film could candidate for a transparent high-performance TE material.

Experimental Details
First-Principles Atomic Calculations
Experimental Measurements and Discussion
Ωa‐IZO
Findings
Conclusions
Full Text
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