Abstract

Over the last decade, thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have significantly contributed to flat‐panel display (FPD) technologies because of their various advantages. However, a practical complementary circuit using TAOSs has not been realized as conventional TAOSs exhibit only n‐type semiconducting behavior. Herein, we propose a material design concept of a high‐performance p‐type transparent amorphous semiconductor (TAS) utilizing the pseudo s‐orbital nature of spatially spread large p‐orbitals and demonstrate an amorphous Cu−Sn−I (a‐CuSnI) thin film with high transparency and high Hall mobility (9 cm2/V). The proposed a‐CuSnI thin film was successfully fabricated using a solution process at considerably low temperature (<140 °C). We hope this new p‐type TAS proves to be a turning point in the field of active matrix devices for next‐generation displays.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call