19‐4: Late-News Paper: New P‐type Amorphous Semiconductor with High Transparency and High Mobility of 9 cm2/Vs for Next‐Generation Displays

Abstract

Over the last decade, thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have significantly contributed to flat‐panel display (FPD) technologies because of their various advantages. However, a practical complementary circuit using TAOSs has not been realized as conventional TAOSs exhibit only n‐type semiconducting behavior. Herein, we propose a material design concept of a high‐performance p‐type transparent amorphous semiconductor (TAS) utilizing the pseudo s‐orbital nature of spatially spread large p‐orbitals and demonstrate an amorphous Cu−Sn−I (a‐CuSnI) thin film with high transparency and high Hall mobility (9 cm2/V). The proposed a‐CuSnI thin film was successfully fabricated using a solution process at considerably low temperature (<140 °C). We hope this new p‐type TAS proves to be a turning point in the field of active matrix devices for next‐generation displays.