Abstract
Over a decade, transparent amorphous oxide semiconductors (TAOSs) have well demonstrated the advantages of electronic devices based on transparent amorphous semiconductors (TASs). However, it has been rather difficult to obtain p-type TAS to date. Therefore, it would be attractive if the p-type TAS is realized. In this paper, we propose a material design concept of p-type TAS and an example, a-Cu-Sn- I. The proposed solution-processable p-type a-CuSnI thin films exhibits a large Hall mobility of 9 cm2V−1s−l, and a promising energy-level for conventional optoelectronics including OLEDs and solar cells.
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