Abstract
Calcium doped Zinc‐Oxide thin film transistors (Ca‐ZnO TFTs) were successfully fabricated on glass at low temperature. The characteristics of Ca‐ZnO TFTs with 3 wt % Ca content and Ca ZnO TFTs with 10 wt % Ca content were compared. The results suggested that the Ca‐ZnO TFTs with 10 wt % Ca content exhibit better electrical performances with the saturation mobility (μsat) of 55.7 cm2V‐1s‐1, subthreshold slope (SS) of 0.124 V/dec, Ion/Ioff of 4.67×109.
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