P‐1.5: Fabrication of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors with Submicron Channel Length

Abstract

A method based on photoresist trimming technique was developed to fabricate self‐aligned top‐gate amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistors (TFTs) with submicron channel length. In this scheme, a hard mask layer was adopted to further reduce the channel length defined by the photoresist trimming process. With this method, the self‐aligned top‐gate a‐IGZO TFT with channel length of about 0.6µm is fabricated. Moreover, the fabricated device shows a field effect mobility of 6.8 cm2/Vs, a subthreshold swing of 0.29V/decade, and high ON/OFF current ratio up to 108.