Flexible organic transistors with submicron channel lengths and gate-to-contact overlaps

Abstract

Using direct-write electron-beam lithography, low-voltage organic thin-film transistors (TFTs) with channel lengths and parasitic gate-to-source and gate-to-drain overlaps as small as 100 nm have been fabricated on flexible polymeric substrates. Despite the small channel lengths and gate-to-contact overlaps, these TFTs display good static current-voltage characteristics, including on/off current ratios of nine orders of magnitude, subthreshold swings of about 100 mV/decade, turn-on voltages of 0 V, negligibly small threshold-voltage roll-off, and contact resistances below 1 kOhm-cm. TFTs with such small critical dimensions are of interest for high-frequency applications.