Abstract
Abstract Oxygen-doped and nitrogen-doped silicon films deposited under ultrahigh vacuum were studied for applications in silicon hetero-bipolar transistors (HBTs). It was found through reflection high energy electron diffraction observations that films of SiOx and SiNx can be epitaxially grown for x as high as 0.1. Incorporation of oxygen and nitrogen into the film can be controlled by the substrate temperature and the oxygen or ammonia pressure respectively, and is consistent with previous results of adsorption on the clean silicon surface. The crystalline quality of the films depends on the distance from the epi-substrate interface, and it is better near the heterointerface than in the surface region. HBTs with an SiOx and an SiNx emitter are fabricated using arsenic diffusion from a poly-silicon overlayer for n-type doping, and their test results are described. For improving the HBT characteristics, we have studied in situ arsenic doping into SiOx and SiNx films. The experiment of in situ doping indicates that a high concentration of arsenic prevents oxygen and nitrogen doping.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
