Abstract
Zinc tin oxide (ZTO) is investigated as a photoluminescent sensor for oxygen (O2); chemisorbed oxygen quenches the luminescence intensity. At the same time, ZTO is also studied as a resistive sensor; being an n-type semiconductor, its electrical conductance decreases by adsorption of oxygen. Both phenomena can be exploited for quantitative O2 sensing. The respective sensor responses can be described by the same modified Stern-Volmer model that distinguishes between accessible and non-accessible luminescence centers or charge carriers, respectively. The impact of the temperature is studied in the range from room temperature up to 150 °C.
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