Abstract
Isothermal and isochronal annealing studies have been performed on E′1 defects created in amorphous SiO2 by implantation of 80-keV H+ ions. Defect creation is via ionization energy deposition. Annealing data are analyzed using models for thermal detrapping and for bimolecular reactions adapted to allow for a Gaussian activation energy spread. Values from 0.82 to 1.27 eV are obtained with spreads of ∼14%. Physical justification of the energy spread approach is discussed. We conclude that defect annealing proceeds via the same mechanism as for E1 defects produced in SiO2 by Ar+ implantation where elastic displacement processes dominate in defect creation.
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