Abstract
Quenched in defects decrease the conductivity of thin gold films deposited on bismuth oxide. Isothermal and isochronal annealing studies indicate that in the temperature range of 75–130°C monovacancy migration occurs. The calculated activation energy of 0.79 eV is in good agreement with literature data. Corresponding anneals in situ by ellipsometry show definite changes in the ellipsometer parameters Δ and ψ. The results emphasize the fact that the optical properties of thin films may be changed by annealing of defects, and that ellipsometry may be of considerable value in studying the annealing kinetics of thin films.
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